IPA60R190E6 N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R190E6 *.

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Datasheet Specifications

Part number: IPA60R190E6
Manufacturer: INCHANGE
File Size: 219.00 KB
Datasheet: IPA60R190E6-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 20.2 12.8 59 PD Total Dissipation @TC=25℃ 34

IPA60R190E6 Distributors

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IPA60R190E6 N-Channel MOSFET INCHANGE

INCHANGE IPA60R190E6-like datasheet