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IPA60R180C7 N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R180C7 *.

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Datasheet Specifications

Part number
IPA60R180C7
Manufacturer
INCHANGE
File Size
219.10 KB
Datasheet
IPA60R180C7-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 9 5 45 PD Total Dissipation @TC=25℃ 29 Tj Ma

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