Datasheet Details
- Part number
- IPA60R180C7
- Manufacturer
- INCHANGE
- File Size
- 219.10 KB
- Datasheet
- IPA60R180C7-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPA60R180C7 Description
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R180C7 *.
IPA60R180C7 Features
* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IPA60R180C7 Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±20
9 5
45
PD
Total Dissipation @TC=25℃
29
Tj
Ma
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