IPAN60R650CE Datasheet - INCHANGE

IPAN60R650CE, N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPAN60R650CE *.

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IPAN60R650CE-INCHANGE.pdf

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Datasheet Details

Part number:

IPAN60R650CE

Manufacturer:

INCHANGE

File Size:

218.25 KB

Description:

N-Channel MOSFET

Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9.9 A IDM Drain Current-Single Plused 19 A PD Total Dissipation @TC=25℃ 28 W Tj

IPAN60R650CE Distributors

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IPAN60R650CE N-Channel MOSFET INCHANGE

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