Datasheet Details
- Part number
- IPA037N08N3
- Manufacturer
- INCHANGE
- File Size
- 251.42 KB
- Datasheet
- IPA037N08N3-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPA037N08N3 Description
isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3 *.
IPA037N08N3 Features
* Low drain-source on-resistance:
RDS(on) ≤3.7mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IPA037N08N3 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
80
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
75
IDM
Drain Current-Single Pulsed
300
PD
Total Dissipation @TC=25℃
41
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Tem
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