Datasheet Details
- Part number
- IPA040N06N
- Manufacturer
- Infineon ↗
- File Size
- 1.25 MB
- Datasheet
- IPA040N06N-Infineon.pdf
- Description
- MOSFET
IPA040N06N Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA040N06N Data Sheet Rev.2.1 Final Power Managem.
Features.
Optimized for high performance SMPS, e.
100% avalanche tested.
Superior thermal resistance.
IPA040N06N Features
* Optimized for high performance SMPS, e. g. sync. rec.
* 100% avalanche tested
* Superior thermal resistance
* N-channel
IPA040N06N Applications
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
4.0
mΩ
ID 69 A
QOSS
44
nC
QG(0V. .10V)
38
nC
OptiMOSTM Power-Transistor, 60 V IPA040N06N
TO-220-FP
Gate
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