IPA030N10N3 - N-Channel MOSFET
IPA030N10N3 Features
* Low drain-source on-resistance: RDS(on) ≤ 3mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Device for use in a wide variety of applications
* ABS
