IPA057N08N3 Datasheet - INCHANGE

IPA057N08N3, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3 *.

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IPA057N08N3-INCHANGE.pdf

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Datasheet Details

Part number:

IPA057N08N3

Manufacturer:

INCHANGE

File Size:

252.12 KB

Description:

N-Channel MOSFET

Features

* Low drain-source on-resistance: RDS(on) ≤ 5.7mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 240 PD Total Dissipation @TC=25℃ 39 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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IPA057N08N3 N-Channel MOSFET INCHANGE

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