IPA028N08N3G Power-Transistor

Infineon Technologies

Description

OptiMOS(TM)3 Power-Transistor .

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Datasheet Specifications

Part number: IPA028N08N3G
Manufacturer: Infineon ↗ Technologies
File Size: 378.50 KB
Datasheet: IPA028N08N3G_InfineonTechnologies.pdf
Description: Power-Transistor

Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free platin

Applications

* Halogen-free according to IEC61249-2-21 Type IPA028N08N3 G IPA028N08N3 G Product Summary VDS RDS(on),max ID 80 V 2.8 mW 89 A Package PG-TO-220-FP Marking 028N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain curre

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IPA028N08N3G Power-Transistor Infineon Technologies

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