* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo
IPA086N10N3G Datasheet (523.96 KB)
IPA086N10N3G
Infineon ↗ Technologies
523.96 KB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 100V
OptiMOS™3 Power-Transistor IPA086N10N3 G
Data Sheet
Rev. 2.4 .
📁 Related Datasheet
IPA086N10N3 N-Channel MOSFET (INCHANGE)
IPA086N10N3 MOSFET (Infineon)
IPA083N10N5 MOSFET (Infineon)
IPA083N10N5 N-Channel MOSFET (INCHANGE)
IPA028N08N3G Power-Transistor (Infineon Technologies)
IPA029N06N MOSFET (Infineon)
IPA029N06N N-Channel MOSFET (INCHANGE)
IPA030N10N3 N-Channel MOSFET (INCHANGE)
IPA030N10N3 Power-Transistor (Infineon)
IPA030N10N3G Power-Transistor (Infineon Technologies)
