Datasheet Details
- Part number
- IPA086N10N3G
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 523.96 KB
- Datasheet
- IPA086N10N3G_InfineonTechnologies.pdf
- Description
- MOSFET
IPA086N10N3G Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 100V OptiMOS™3 Power-Transistor IPA086N10N3 G Data Sheet Rev.2.4 .
IPA086N10N3G Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo
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