IPA086N10N3G Datasheet - Infineon Technologies

IPA086N10N3G, MOSFET

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 100V OptiMOS™3 Power-Transistor IPA086N10N3 G Data Sheet Rev.2.4 .

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Datasheet Details

Part number:

IPA086N10N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

523.96 KB

Description:

MOSFET

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo

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