IPA086N10N3G MOSFET

Infineon Technologies

Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 100V OptiMOS™3 Power-Transistor IPA086N10N3 G Data Sheet Rev.2.4 .

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Datasheet Specifications

Part number: IPA086N10N3G
Manufacturer: Infineon ↗ Technologies
File Size: 523.96 KB
Datasheet: IPA086N10N3G_InfineonTechnologies.pdf
Description: MOSFET

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo

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IPA086N10N3G MOSFET Infineon Technologies

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