IPA083N10N5
1.64MB
Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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📁 Related Datasheet
IPA083N10N5 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPA083N10N5
·FEATURES ·With To-220F package ·Low input capacitance and gate charge ·Low gate .
IPA086N10N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Swi.
IPA086N10N3 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 100V
OptiMOS™3 Power-Transistor IPA086N10N3 G
Data Sheet
Rev. 2.4 .
IPA086N10N3G - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 100V
OptiMOS™3 Power-Transistor IPA086N10N3 G
Data Sheet
Rev. 2.4 .
IPA028N08N3G - Power-Transistor
(Infineon Technologies)
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gat.
IPA029N06N - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSTM Power-Transistor, 60 V IPA029N06N
Data Sheet
Rev. 2.2 Final
Power Managem.
IPA029N06N - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.
IPA030N10N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤ 3mΩ (max) ·Enhancement mode ·Fast Switc.
IPA030N10N3 - Power-Transistor
(Infineon)
IPA030N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
IPA030N10N3G - Power-Transistor
(Infineon Technologies)
IPA030N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.