IPA041N04NG Datasheet, Mosfet, Infineon

IPA041N04NG Features

• Mosfet
• Optimized technology for DC/DC converters
• Qualified according to JEDEC 1) for target applications
• N-channel, normal level
• Excellent gate charge

PDF File Details

Part number:

IPA041N04NG

Manufacturer:

Infineon ↗

File Size:

1.29MB

Download:

📄 Datasheet

Description:

Mosfet. Features

Optimized technology for DC/DC converters

Qualified according to JEDEC 1) for target applications

IPA041N04NG Application

• Applications
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)

TAGS

IPA041N04NG

Infineon

📁 Related Datasheet

IPA041N04N - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.

IPA040N06N - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA040N06N Data Sheet Rev. 2.1 Final Power Managem.

IPA040N06N - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.

IPA045N10N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPA045N10N3,IIPA045N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Swi.

IPA045N10N3 - MOSFET (Infineon)
IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low.

IPA045N10N3G - MOSFET (Infineon Technologies)
IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low.

IPA028N08N3G - Power-Transistor (Infineon Technologies)
OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gat.

IPA029N06N - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA029N06N Data Sheet Rev. 2.2 Final Power Managem.

IPA029N06N - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.

IPA030N10N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 3mΩ (max) ·Enhancement mode ·Fast Switc.