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IPA029N06N MOSFET

IPA029N06N Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA029N06N Data Sheet Rev.2.2 Final Power Managem.
Features. Optimized for high performance SMPS, e. 100% avalanche tested. Superior thermal resistance.

IPA029N06N Features

* Optimized for high performance SMPS, e. g. sync. rec.
* 100% avalanche tested
* Superior thermal resistance
* N-channel

IPA029N06N Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 60 V RDS(on),max 2.9 mΩ ID 84 A QOSS 65 nC QG(0V. .10V) 56 nC OptiMOSTM Power-Transistor, 60 V IPA029N06N TO-220-FP Gate

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