IPA086N10N3 Datasheet - INCHANGE

IPA086N10N3, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 *.

datasheet Preview Page 1 from Datasheet4u.com

IPA086N10N3-INCHANGE.pdf

IPA086N10N3 Datasheet Preview — Preview of IPA086N10N3 PDF

Datasheet Details

Part number:

IPA086N10N3

Manufacturer:

INCHANGE

File Size:

252.30 KB

Description:

N-Channel MOSFET

Features

* Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 256 PD Total Dissipation @TC=25℃ 39 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

IPA086N10N3 Distributors

📁 Related Datasheet

IPA086N10N3G IPA083N10N5 IPA028N08N3G IPA029N06N IPA030N10N3G IPA030N10NF2S

📌 All Tags

IPA086N10N3 N-Channel MOSFET INCHANGE

INCHANGE IPA086N10N3-like datasheet