IPA057N08N3G Datasheet - Infineon Technologies

IPA057N08N3G, MOSFET

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 80V OptiMOS™3 Power-Transistor IPA057N08N3 G Data Sheet Rev.2.2 F.

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Datasheet Details

Part number:

IPA057N08N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

597.54 KB

Description:

MOSFET

Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified acc

Applications

* Halogen-free according to IEC61249-2-21
* Fully isolated package (2500 VAC; 1 minute) Type IPA057N08N3 G IPA057N08N3 G Product Summary VDS RDS(on),max ID 80 V 5.7 mW 60 A Package Marking PG-TO220-FP 057N08N Maximum ratings, at T j=25 °C, unless otherwise specified Paramete

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