IPA057N08N3G Datasheet, Mosfet, Infineon Technologies

IPA057N08N3G Features

• Mosfet
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-chan

PDF File Details

Part number:

IPA057N08N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

597.54kb

Download:

📄 Datasheet

Description:

Mosfet.

IPA057N08N3G Application

• Applications
• Halogen-free according to IEC61249-2-21
• Fully isolated package (2500 VAC; 1 minute) Type IPA057N08N3 G IPA057N08

TAGS

IPA057N08N3G

Infineon Technologies

📁 Related Datasheet

IPA057N08N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 5.7mΩ (max) ·Enhancement mode ·Fast Swi.

IPA057N08N3 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 80V OptiMOS™3 Power-Transistor IPA057N08N3 G Data Sheet Rev. 2.2 F.

IPA057N06N3 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.

IPA057N06N3G - Power-Transistor (Infineon)
Ie\Q #      &'% #$  # : A 0<& <,9=4=>: < 6LHZ[XLY Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>?

IPA028N08N3G - Power-Transistor (Infineon Technologies)
OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gat.

IPA029N06N - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA029N06N Data Sheet Rev. 2.2 Final Power Managem.

IPA029N06N - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.

IPA030N10N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 3mΩ (max) ·Enhancement mode ·Fast Switc.

IPA030N10N3 - Power-Transistor (Infineon)
IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPA030N10N3G - Power-Transistor (Infineon Technologies)
IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.