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IPAN60R800CE N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
IPAN60R800CE
Manufacturer
INCHANGE
File Size
197.37 KB
Datasheet
IPAN60R800CE-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With TO-220F package
* Low input capacitance and gate charge
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications INCHANGE Semiconductor IPAN60R800CE
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 8.4 5.3 15.7

IPAN60R800CE Distributors

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