IPB60R099C6 N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor IPB60R099C6 *.

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Datasheet Specifications

Part number: IPB60R099C6
Manufacturer: INCHANGE
File Size: 254.25 KB
Datasheet: IPB60R099C6-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 37.9 24 112 PD Total Dissipation @TC=25℃ 278 Tch Max. Operating

IPB60R099C6 Distributors

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IPB60R099CP IPB60R099CPA IPB60R040C7 IPB60R070CFD7 IPB60R105CFD7 IPB60R120P7

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IPB60R099C6 N-Channel MOSFET INCHANGE

INCHANGE IPB60R099C6-like datasheet