IPD60R180C7 Datasheet, Mosfet, INCHANGE

IPD60R180C7 Features

• Mosfet
• Static drain-source on-resistance: RDS(on)≤0.18Ω
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance

PDF File Details

Part number:

IPD60R180C7

Manufacturer:

INCHANGE

File Size:

238.28kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPD60R180C7 Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD60R180C7

INCHANGE

📁 Related Datasheet

IPD60R180C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPD60R180C7 Data Sheet Rev. 2.0 Final Power Man.

IPD60R180CM8 - MOSFET (Infineon)
IPD60R180CM8 MOSFET 600V CoolMOSª CM8 Power Transistor The CoolMOS™ 8th generation platform is a revolutionary technology for high voltage power MOSF.

IPD60R180P7S - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R180P7S，IIPD60R180P7S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·Enhancement mode: ·100% avala.

IPD60R180P7S - MOSFET (Infineon)
IPD60R180P7S MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFE.

IPD60R170CFD7 - MOSFET (Infineon)
IPD60R170CFD7 MOSFET 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD60R170CFD7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% ava.

IPD60R1K0CE - MOSFET (Infineon Technologies)
IPD60R1K0CE, IPU60R1K0CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD60R1K0CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche .

IPD60R1K4C6 - Power Transistor (Infineon Technologies)
GHL@?M +

IPD60R1K4C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanch.