IPD65R600E6 Datasheet, Mosfet, INCHANGE

IPD65R600E6 Features

  • Mosfet
  • Static drain-source on-resistance: RDS(on)≤0.6Ω
  • Enhancement mode:
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance a

PDF File Details

Part number:

IPD65R600E6

Manufacturer:

INCHANGE

File Size:

238.06kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: IPD65R600E6 📥 Download PDF (238.06kb)
Page 2 of IPD65R600E6

IPD65R600E6 Application

  • Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD65R600E6
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

IPD65R600E6 - MOSFET (Infineon Technologies)
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.2, 2016-08-04 Po.

IPD65R600C6 - Power Transistor (Infineon Technologies)
GIM@?N + =L 9 D- PA <= 1 =E A ;G F > =;L2J 9 FK A K L G J GGD+ - 1     4 G G D + - 1 Y  . G O=J2J 9 FK A K L G J '. P  .

IPD65R600C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.

IPD65R650CE - MOSFET (Infineon)
IPD65R650CE, IPA65R650CE MOSFET 650V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD65R650CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R650CE,IIPD65R650CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.65Ω ·Enhancement mode: ·100% avalanc.

IPD65R660CFD - Power Transistor (Infineon Technologies)
# $% %7 & ' ( + ) * ) ) ) $ 1 # 21 # 2# $ 2 3 )2 2 # 34 5 67 3 3 3 81 # 2% 8 #3 # 26 33 # # 2# $ %# .

IPD65R660CFD - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R660CFD,IIPD65R660CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.66Ω ·Enhancement mode: ·100% aval.

IPD65R660CFDA - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS™ CFDA Power Transistor IPD65R660CFDA Data Sheet Rev. 2.1 Final .

IPD65R190C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPD65R190C7 Data Sheet Rev. 2.1 Final Power Man.

IPD65R190C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.19Ω ·Enhancement mode: ·100% avalanc.

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 650V 7.3A TO252-3
DigiKey
IPD65R600E6ATMA1
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts