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IPD65R1K4C6 MOSFET

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Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 650V 650V CoolMOS™ C6 Power Transistor IPD65R1K4C6 Data Sheet Rev.2.0 Final In.
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineo.

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Features

* Extremely low losses due to very low FOM Rdson
* Qg and Eoss
* Very high commutation ruggedness
* Easy to use/drive
* Pb-free plating, Halogen free mold compound

IPD65R1K4C6 Distributors

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