IPD65R1K4C6 Datasheet, Mosfet, Infineon

IPD65R1K4C6 Features

• Mosfet
• Extremely low losses due to very low FOM Rdson
• Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Pb-free plating, Halogen fr

PDF File Details

Part number:

IPD65R1K4C6

Manufacturer:

Infineon ↗

File Size:

1.54MB

Download:

📄 Datasheet

Description:

Mosfet. CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pio

IPD65R1K4C6 Application

• Applications even more efficient, more compact, lighter and cooler. Features
• Extremely low losses due to very low FOM Rdson
• Qg and

TAGS

IPD65R1K4C6

Infineon

📁 Related Datasheet

IPD65R1K4C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanch.

IPD65R1K4CFD - MOSFET (Infineon)
#$% & R ev'.( 2.(1, 2013-07-31 )* ', - -& . & -( . & -2 - ' .' 4 -, , & -/ & -& 4 *. 4 / / -& & -, & -& ' - . 0 1 23 . . . 4 ...

IPD65R1K4CFD - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R1K4CFD,IIPD65R1K4CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalan.

IPD65R1K0CE - MOSFET (Infineon)
IPD65R1K0CE MOSFET 650V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD65R1K0CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche .

IPD65R1K5CE - MOSFET (Infineon)
IPD65R1K5CE MOSFET 650V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD65R1K5CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R1K5CE,IIPD65R1K5CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.5Ω ·Enhancement mode: ·100% avalanch.

IPD65R190C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPD65R190C7 Data Sheet Rev. 2.1 Final Power Man.

IPD65R190C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.19Ω ·Enhancement mode: ·100% avalanc.

IPD65R225C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPD65R225C7 Data Sheet Rev. 2.0 Final Power Man.