IPD65R600E6 Datasheet - Infineon Technologies

IPD65R600E6, MOSFET

MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev.2.2, 2016-08-04 Po.
CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infine.

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Datasheet Details

Part number:

IPD65R600E6

Manufacturer:

Infineon ↗ Technologies

File Size:

1.12 MB

Description:

MOSFET

Features

* Extremely low losses due to very low F O M R dson
* Qg and E oss
* Very high commutation ruggedness
* Easy to use/drive
* JEDEC1) qualified, Pb-free plating, available in Halogen free mold compound 2) Appl

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IPD65R600E6 MOSFET Infineon Technologies

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