IPD65R600E6
Infineon ↗ Technologies
1.12MB
Mosfet. CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pi
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IPD65R600E6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.
IPD65R600C6 - Power Transistor
(Infineon Technologies)
GIM@?N
+ =L 9 D- PA <= 1 =E A ;G F
IPD65R600C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch.
IPD65R650CE - MOSFET
(Infineon)
IPD65R650CE, IPA65R650CE
MOSFET
650V CoolMOSª CE Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.
IPD65R650CE - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R650CE,IIPD65R650CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.65Ω ·Enhancement mode: ·100% avalanc.
IPD65R660CFD - Power Transistor
(Infineon Technologies)
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IPD65R660CFD - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPD65R660CFD,IIPD65R660CFD
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.66Ω ·Enhancement mode: ·100% aval.
IPD65R660CFDA - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CFDA Automotive
650V CoolMOS™ CFDA Power Transistor IPD65R660CFDA
Data Sheet
Rev. 2.1 Final
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IPD65R190C7 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
650V CoolMOS™ C7 Power Transistor IPD65R190C7
Data Sheet
Rev. 2.1 Final
Power Man.
IPD65R190C7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.19Ω ·Enhancement mode: ·100% avalanc.