IPD65R380C6
Infineon ↗ Technologies
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IPD65R380C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R380C6,IIPD65R380C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanc.
IPD65R380E6 - Power Transistor
(Infineon Technologies)
MOSFET
Metall Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOSTM E6 Power Transistor IPx65R380E6
Data Sheet
Rev. 2.2 Final
Power Ma.
IPD65R380E6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPD65R380E6,IIPD65R380E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalan.
IPD65R190C7 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
650V CoolMOS™ C7 Power Transistor IPD65R190C7
Data Sheet
Rev. 2.1 Final
Power Man.
IPD65R190C7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.19Ω ·Enhancement mode: ·100% avalanc.
IPD65R1K0CE - MOSFET
(Infineon)
IPD65R1K0CE
MOSFET
650V CoolMOSª CE Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.
IPD65R1K0CE - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche .
IPD65R1K4C6 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C6 650V
650V CoolMOS™ C6 Power Transistor IPD65R1K4C6
Data Sheet
Rev. 2.0 Final
In.
IPD65R1K4C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanch.
IPD65R1K4CFD - MOSFET
(Infineon)
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