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IPD65R190C7 MOSFET

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Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPD65R190C7 Data Sheet Rev.2.1 Final Power Man.
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineo.

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Features

* Increased MOSFET dv/dt ruggedness
* Better efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Easy to use/drive
* Pb-free plating, halogen free mold compound
* Qualified for industrial grade app

Applications

* according to JEDEC (J-S

IPD65R190C7 Distributors

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