IPD65R400CE Datasheet, Mosfet, INCHANGE

IPD65R400CE Features

• Mosfet
• Static drain-source on-resistance: RDS(on)≤0.4Ω
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance a

PDF File Details

Part number:

IPD65R400CE

Manufacturer:

INCHANGE

File Size:

238.44kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPD65R400CE Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPD65R400CE

INCHANGE

📁 Related Datasheet

IPD65R400CE - MOSFET (Infineon)
IPD65R400CE, IPS65R400CE MOSFET 650V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPD65R420CFD - Power Transistor (Infineon Technologies)
#$%& '()* +,-' #'.,/01-2/(03 $,'*- %44'/( &3)15,5(03 600* #7 6$89 ;<=> ;<=> 600* #7 6$89 ?0@'3 &3)15,5(03 A?+;

IPD65R420CFDA - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS™ CFDA Power Transistor IPD65R420CFDA Data Sheet Rev. 2.1 Final .

IPD65R190C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPD65R190C7 Data Sheet Rev. 2.1 Final Power Man.

IPD65R190C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.19Ω ·Enhancement mode: ·100% avalanc.

IPD65R1K0CE - MOSFET (Infineon)
IPD65R1K0CE MOSFET 650V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.

IPD65R1K0CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche .

IPD65R1K4C6 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 650V 650V CoolMOS™ C6 Power Transistor IPD65R1K4C6 Data Sheet Rev. 2.0 Final In.

IPD65R1K4C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanch.

IPD65R1K4CFD - MOSFET (Infineon)
#$% & R ev'.( 2.(1, 2013-07-31 )* ', - -& . & -( . & -2 - ' .' 4 -, , & -/ & -& 4 *. 4 / / -& & -, & -& ' - . 0 1 23 . . . 4 ...