IPD65R600C6 - N-Channel MOSFET
IPD65R600C6 Features
* Static drain-source on-resistance: RDS(on)≤0.6Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS
