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IPD65R600C6

N-Channel MOSFET

IPD65R600C6 Features

* Static drain-source on-resistance: RDS(on)≤0.6Ω

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Fast switching

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS

IPD65R600C6 Datasheet (237.51 KB)

Preview of IPD65R600C6 PDF

Datasheet Details

Part number:

IPD65R600C6

Manufacturer:

INCHANGE

File Size:

237.51 KB

Description:

N-channel mosfet.

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TAGS

IPD65R600C6 N-Channel MOSFET INCHANGE

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