IPD65R250C6
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IPD65R250C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPD65R250C6,IIPD65R250C6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.25Ω ·Enhancement mode: ·100% avalan.
IPD65R250E6 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ E6 650V
650V CoolMOS™ E6 Power Transistor IPD65R250E6
Data Sheet
Rev. 2.2 Final
Indu.
IPD65R250E6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R250E6,IIPD65R250E6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.25Ω ·Enhancement mode: ·100% avalanc.
IPD65R225C7 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
650V CoolMOS™ C7 Power Transistor IPD65R225C7
Data Sheet
Rev. 2.0 Final
Power Man.
IPD65R225C7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R225C7,IIPD65R225C7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.225Ω ·Enhancement mode: ·100% avalan.
IPD65R190C7 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
650V CoolMOS™ C7 Power Transistor IPD65R190C7
Data Sheet
Rev. 2.1 Final
Power Man.
IPD65R190C7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R190C7,IIPD65R190C7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.19Ω ·Enhancement mode: ·100% avalanc.
IPD65R1K0CE - MOSFET
(Infineon)
IPD65R1K0CE
MOSFET
650V CoolMOSª CE Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.
IPD65R1K0CE - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche .
IPD65R1K4C6 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C6 650V
650V CoolMOS™ C6 Power Transistor IPD65R1K4C6
Data Sheet
Rev. 2.0 Final
In.
