IPD78CN10N - N-Channel MOSFET
IPD78CN10N Features
* Static drain-source on-resistance: RDS(on)≤78mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Ideal for high-frequency switching and synchronous rectification
* ABSOLUTE MAXIMUM
