IPD025N06N
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N-channel mosfet.
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IPD025N06N - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSTM Power-Transistor, 60 V IPD025N06N
Data Sheet
Rev. 2.5 Final
Power Managem.
IPD029N04NF2S - MOSFET
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IPD029N04NF2S
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Kf^S
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IPD031N03L - N-Channel MOSFET
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isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanch.
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Kf^S
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IPD031N06L3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPD031N06L3, IIPD031N06L3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avala.
IPD031N06L3 - Power-Transistor
(Infineon)
Jf]R
% #
$()'#$% %
IPD031N06L3G - Power-Transistor
(Infineon)
Jf]R
% #
$()'#$% %
IPD033N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanch.
IPD033N06N - MOSFET
(Infineon)
IPD033N06N
MOSFET
OptiMOSTM Power-Transistor, 60 V
Features
• Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resi.