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IPD025N06N - N-Channel MOSFET

IPD025N06N Description

isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N *.

IPD025N06N Features

* Static drain-source on-resistance: RDS(on)≤2.5mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Optimized for synchronous rectification
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

IPD025N06N Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IPD025N06N
Manufacturer
INCHANGE
File Size
237.95 KB
Datasheet
IPD025N06N-INCHANGE.pdf
Description
N-Channel MOSFET

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