Datasheet Details
- Part number
- IPD025N06N
- Manufacturer
- INCHANGE
- File Size
- 237.95 KB
- Datasheet
- IPD025N06N-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPD025N06N Description
isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N *.
IPD025N06N Features
* Static drain-source on-resistance:
RDS(on)≤2.5mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
* Optimized for synchronous rectification
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
IPD025N06N Applications
* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field
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