Datasheet Details
- Part number
- IPD034N06N3
- Manufacturer
- INCHANGE
- File Size
- 238.71 KB
- Datasheet
- IPD034N06N3-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPD034N06N3 Description
isc N-Channel MOSFET Transistor IPD034N06N3，IIPD034N06N3 *.
IPD034N06N3 Features
* Static drain-source on-resistance:
RDS(on)≤3.4mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
* High Frequency switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VA
IPD034N06N3 Applications
* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field
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