IPD03N03LA
Infineon ↗ Technologies
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Power-transistor. and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology,
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IPD03N03LB - Power-Transistor
(Infineon Technologies)
IPD03N03LB G
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications •.
IPD031N03L - Power-Transistor
(Infineon)
Kf^S
%&$ #b %
IPD031N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanch.
IPD031N03LG - Power-Transistor
(Infineon)
Kf^S
%&$ #b %
IPD031N06L3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPD031N06L3, IIPD031N06L3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avala.
IPD031N06L3 - Power-Transistor
(Infineon)
Jf]R
% #
$()'#$% %
IPD031N06L3G - Power-Transistor
(Infineon)
Jf]R
% #
$()'#$% %
IPD033N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanch.
IPD033N06N - MOSFET
(Infineon)
IPD033N06N
MOSFET
OptiMOSTM Power-Transistor, 60 V
Features
• Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resi.
IPD034N06N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD034N06N3,IIPD034N06N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.4mΩ ·Enhancement mode: ·100% avalanc.