IPD03N03LB Datasheet, Power-transistor, Infineon Technologies

IPD03N03LB Features

• Power-transistor
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC for target applications
• N-channel, logic level
• Excellent gate charge x R D

PDF File Details

Part number:

IPD03N03LB

Manufacturer:

Infineon ↗ Technologies

File Size:

304.02kb

Download:

📄 Datasheet

Description:

Power-transistor. and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology,

IPD03N03LB Application

• Applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance

TAGS

IPD03N03LB

Infineon Technologies

📁 Related Datasheet

IPD03N03LA - Power-Transistor (Infineon Technologies)
IPD03N03LA G IPS03N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for targe.

IPD031N03L - Power-Transistor (Infineon)
Kf^S %&$ #b % (>.;?6?@<> 7NJ\]ZN[ R 3 DEDH;E5: ;@ 9 ( * . / 8AC. ( + . R* BE;? ;K76 E75: @ A>A9J 8AC  5A@ G7CE7CD R, F3 >;8;76 3 .

IPD031N03L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanch.

IPD031N03LG - Power-Transistor (Infineon)
Kf^S %&$ #b % (>.;?6?@<> 7NJ\]ZN[ R 3 DEDH;E5: ;@ 9 ( * . / 8AC. ( + . R* BE;? ;K76 E75: @ A>A9J 8AC  5A@ G7CE7CD R, F3 >;8;76 3.

IPD031N06L3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avala.

IPD031N06L3 - Power-Transistor (Infineon)
Jf]R %    #    $()'#$% &#  % (>.;?6?@<> 7NJ\]ZN[ R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8.

IPD031N06L3G - Power-Transistor (Infineon)
Jf]R %    #    $()'#$% &#  % (>.;?6?@<> 7NJ\]ZN[ R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8.

IPD033N06N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanch.

IPD033N06N - MOSFET (Infineon)
IPD033N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resi.

IPD034N06N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD034N06N3，IIPD034N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.4mΩ ·Enhancement mode: ·100% avalanc.