IPD031N03LG Datasheet, Power-transistor, Infineon

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Part number:

IPD031N03LG

Manufacturer:

Infineon ↗

File Size:

668.80kb

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📄 Datasheet

Description:

Power-transistor.

TAGS

IPD031N03LG

Infineon

📁 Related Datasheet

IPD031N03L - Power-Transistor (Infineon)
Kf^S %&$ #b % (>.;?6?@<> 7NJ\]ZN[ R 3 DEDH;E5: ;@ 9 ( * . / 8AC. ( + . R* BE;? ;K76 E75: @ A>A9J 8AC  5A@ G7CE7CD R, F3 >;8;76 3 .

IPD031N03L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanch.

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IPD031N06L3 - Power-Transistor (Infineon)
Jf]R %    #    $()'#$% &#  % (>.;?6?@<> 7NJ\]ZN[ R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8.

IPD031N06L3G - Power-Transistor (Infineon)
Jf]R %    #    $()'#$% &#  % (>.;?6?@<> 7NJ\]ZN[ R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8.

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isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanch.

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isc N-Channel MOSFET Transistor IPD034N06N3，IIPD034N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.4mΩ ·Enhancement mode: ·100% avalanc.

IPD034N06N3 - Power-Transistor (Infineon)
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IPD034N06N3G - Power-Transistor (Infineon)
Ie\Q #       %&$ # B<  # : A 0<& <,9=4=>: < 6LHZ[XLY Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>?