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IPD025N06N MOSFET

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Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPD025N06N Data Sheet Rev.2.5 Final Power Managem.
Features. Optimized for synchronous rectification. 100% avalanche tested. Superior thermal resistance. N-channel,.

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Features

* Optimized for synchronous rectification
* 100% avalanche tested
* Superior thermal resistance
* N-channel, normal level

Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 60 V RDS(on),max 2.5 mΩ ID 90 A QOSS 81 nC QG(0V. .10V) 71 nC OptiMOSTM Power-Transistor, 60 V IPD025N06N D-PAK 12 3 tab

IPD025N06N Distributors

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