* Optimized for synchronous rectification
* 100% avalanche tested
* Superior thermal resistance
* N-channel, normal level
* Qualified according to JEDEC1) for target applications
* Pb-free lead plating; RoHS compliant
* Halogen-free according
IPD025N06N Datasheet (1.28 MB)
IPD025N06N
1.28 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSTM Power-Transistor, 60 V IPD025N06N
Data Sheet
Rev. 2.5 Final
Power Managem.
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