Datasheet Details
- Part number
- IPD025N06N
- Manufacturer
- Infineon ↗
- File Size
- 1.28 MB
- Datasheet
- IPD025N06N-Infineon.pdf
- Description
- MOSFET
IPD025N06N Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPD025N06N Data Sheet Rev.2.5 Final Power Managem.
Features.
Optimized for synchronous rectification.
100% avalanche tested.
Superior thermal resistance.
N-channel,.
IPD025N06N Features
* Optimized for synchronous rectification
* 100% avalanche tested
* Superior thermal resistance
* N-channel, normal level
IPD025N06N Applications
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
2.5
mΩ
ID 90 A
QOSS
81
nC
QG(0V. .10V)
71
nC
OptiMOSTM Power-Transistor, 60 V IPD025N06N
D-PAK
12 3
tab
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