IPD033N06N - N-Channel MOSFET
IPD033N06N Features
* Static drain-source on-resistance: RDS(on)≤3.3mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Optimized for synchronous rectification
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL
