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IPD033N06N

N-Channel MOSFET

IPD033N06N Features

* Static drain-source on-resistance: RDS(on)≤3.3mΩ

* Enhancement mode:

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Optimized for synchronous rectification

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

IPD033N06N Datasheet (238.50 KB)

Preview of IPD033N06N PDF

Datasheet Details

Part number:

IPD033N06N

Manufacturer:

INCHANGE

File Size:

238.50 KB

Description:

N-channel mosfet.

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IPD033N06N N-Channel MOSFET INCHANGE

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