Datasheet4U Logo Datasheet4U.com

IPI65R380C6

N-Channel MOSFET

IPI65R380C6 Features

* Static drain-source on-resistance: RDS(on) ≤0.38Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching SJ MOSFET while not

IPI65R380C6 General Description


*Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 10.6 A IDM Drain Current-Single Pul.

IPI65R380C6 Datasheet (282.57 KB)

Preview of IPI65R380C6 PDF

Datasheet Details

Part number:

IPI65R380C6

Manufacturer:

INCHANGE

File Size:

282.57 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IPI65R380C6 Power Transistor (Infineon Technologies)

IPI65R310CFD Power Transistor (Infineon Technologies)

IPI65R310CFD N-Channel MOSFET (INCHANGE)

IPI65R065C7 MOSFET (Infineon)

IPI65R099C6 MOSFET (Infineon)

IPI65R099C6 N-Channel MOSFET (INCHANGE)

IPI65R110CFD MOSFET (Infineon)

IPI65R110CFD N-Channel MOSFET (INCHANGE)

IPI65R150CFD MOSFET (Infineon)

IPI65R150CFD N-Channel MOSFET (INCHANGE)

TAGS

IPI65R380C6 N-Channel MOSFET INCHANGE

Image Gallery

IPI65R380C6 Datasheet Preview Page 2

IPI65R380C6 Distributor