IPI65R660CFD - N-Channel MOSFET

INCHANGE

IPI65R660CFD Datasheet Preview — Preview of IPI65R660CFD PDF

Datasheet Details

Part number	IPI65R660CFD
Manufacturer	INCHANGE
File Size	282.20 KB
Description	N-Channel MOSFET
Datasheet	IPI65R660CFD-INCHANGE.pdf

IPI65R660CFD Product details

Description

Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 6 A IDM Drain Current-Single Pulsed 17 A PD Total Dissipation @TC=25℃ 62.5 W Tj Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARA

Features

Static drain-source on-resistance: RDS(on) ≤0.66Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 29, 2020 |