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IPI65R660CFD

N-Channel MOSFET

IPI65R660CFD Features

* Static drain-source on-resistance: RDS(on) ≤0.66Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching SJ MOSFET while of

IPI65R660CFD General Description


*Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 6 A IDM Drain .

IPI65R660CFD Datasheet (282.20 KB)

Preview of IPI65R660CFD PDF

Datasheet Details

Part number:

IPI65R660CFD

Manufacturer:

INCHANGE

File Size:

282.20 KB

Description:

N-channel mosfet.

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IPI65R660CFD N-Channel MOSFET INCHANGE

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