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IPP60R190P6

N-Channel MOSFET

IPP60R190P6 Features

* Static drain-source on-resistance: RDS(on) ≤0.19Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching super junction MOS

IPP60R190P6 General Description


*Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.2 IDM Drain Current-Single Pulsed 5.

IPP60R190P6 Datasheet (241.02 KB)

Preview of IPP60R190P6 PDF

Datasheet Details

Part number:

IPP60R190P6

Manufacturer:

INCHANGE

File Size:

241.02 KB

Description:

N-channel mosfet.

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IPP60R190P6 N-Channel MOSFET INCHANGE

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