IPP60R190C6

Power Transistor

Infineon Technologies

IPP60R190C6 Features

* Extremely low losses due to very low FOM Rdson

* Qg and Eoss

* Very high commutation ruggedness

* Easy to use/drive

* JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC

IPP60R190C6 General Description

CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide a.

IPP60R190C6 Datasheet (1.20 MB)

IPP60R190C6 Datasheet Preview — Preview of IPP60R190C6 PDF

Datasheet Details

Part number:

IPP60R190C6

Manufacturer:

Infineon ↗ Technologies

File Size:

1.20 MB

Description:

Power transistor.
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Powe.

📁 Related Datasheet

IPP60R190C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R190C6，IIPP60R190C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch.

IPP60R190E6 - Power Transistor (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.3 Final Powe.

IPP60R190E6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R190E6，IIPP60R190E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch.

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Man.

IPP60R190P6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R190P6，IIPP60R190P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch.

IPP60R199CP - Power Transistor (Infineon Technologies)
CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qual.

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isc N-Channel MOSFET Transistor IPP60R199CP，IIPP60R199CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.199Ω ·Enhancement mode ·Fast Switc.

IPP60R120C7 - MOSFET (Infineon)
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IPP60R190C6 Power Transistor Infineon Technologies

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IPP60R190C6 Features

IPP60R190C6 General Description

Datasheet Details

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Description:

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