* Increased MOSFET dv/dt ruggedness
* Extremely low losses due to very low FOM Rdson
* Qg and Eoss
* Very high commutation ruggedness
* Easy to use/drive
* Pb-free plating, Halogen free mold compound
* Qualified for industrial grade applications acco
IPP60R160P6 Datasheet (2.57 MB)
IPP60R160P6
2.57 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor IPx60R160P6
Data Sheet
Rev. 2.2 Final
Power Man.
📁 Related Datasheet
IPP60R160P6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R160P6，IIPP60R160P6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.16Ω ·Enhancement mode ·Fast Switch.
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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
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(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R160C6，IIPP60R160C6
·FEATURES ·Static drain-source on-resistance:
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IPP60R165CP
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IPP60R165CP，IIPP60R165CP
·FEATURES ·Static drain-source on-resistance:
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Power Man.
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(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R120C7，IIPP60R120C7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.12Ω ·Enhancement mode ·Fast Switch.
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Metal Oxide Semiconductor Field Effect Transistor
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Powe.
