Datasheet Details
- Part number
- IPP60R180C7
- Manufacturer
- Infineon ↗
- File Size
- 1.85 MB
- Datasheet
- IPP60R180C7-Infineon.pdf
- Description
- MOSFET
IPP60R180C7 Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPP60R180C7 Data Sheet Rev.2.0 Final Power Man.
CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infi.
IPP60R180C7 Features
* Suitable for hard and soft switching (PFC and high performance LLC)
* Increased MOSFET dv/dt ruggedness to 120V/ns
* Increased efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Qualified for industrial
IPP60R180C7 Applications
* according to JEDEC (J-STD20 and JESD22)
Benefits
* Increased economies of scale by use in PFC and PWM topologies in the application
* Higher dv/dt limit enables faster switching leading to higher efficiency
* Enabling higher system efficiency by lower switching losses
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