* Suitable for hard and soft switching (PFC and high performance LLC)
* Increased MOSFET dv/dt ruggedness to 120V/ns
* Increased efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Qualified for industrial
IPP60R180C7 Datasheet (1.85 MB)
IPP60R180C7
1.85 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
600V CoolMOS™ C7 Power Transistor IPP60R180C7
Data Sheet
Rev. 2.0 Final
Power Man.
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(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R180C7，IIPP60R180C7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.18Ω ·Enhancement mode ·Fast Switch.
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isc N-Channel MOSFET Transistor
IPP60R180P7，IIPP60R180P7
·FEATURES ·Static drain-source on-resistance:
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IPP60R120C7，IIPP60R120C7
·FEATURES ·Static drain-source on-resistance:
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IPP60R125C6 - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
IPP60R125C6，IIPP60R125C6
·FEATURES ·Static drain-source on-resistance:
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