IPP60R160C6 Datasheet - INCHANGE

IPP60R160C6, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPP60R160C6，IIPP60R160C6 *

Features

* Static drain-source on-resistance: RDS(on) ≤0.16Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IPP60R160C6-INCHANGE.pdf