IPP60R1K4C6 - N-Channel MOSFET

INCHANGE

IPP60R1K4C6 Datasheet Preview — Preview of IPP60R1K4C6 PDF

Datasheet Details

Part number	IPP60R1K4C6
Manufacturer	INCHANGE
File Size	241.13 KB
Description	N-Channel MOSFET
Datasheet	IPP60R1K4C6-INCHANGE.pdf

IPP60R1K4C6 Product details

Description

Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.2 IDM Drain Current-Single Pulsed 8 PD Total Dissipation @TC=25℃ 28.4 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to

Features

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Static drain-source on-resistance: RDS(on) ≤1.4Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 10, 2020 |