IPP60R280E6 Datasheet - INCHANGE

IPP60R280E6, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPP60R280E6，IIPP60R280E6 *

Features

* Static drain-source on-resistance: RDS(on) ≤0.28Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IPP60R280E6-INCHANGE.pdf