* Increased MOSFET dv/dt ruggedness
* Extremely low losses due to very low FOM Rdson
* Qg and Eoss
* Very high commutation ruggedness
* Easy to use/drive
* Pb-free plating, Halogen free mold compound
* Qualified for industrial grade applications acco
IPP60R280P6 Datasheet (2.55 MB)
IPP60R280P6
2.55 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor IPx60R280P6
Data Sheet
Rev. 2.2 Final
Power Man.
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