* Increased MOSFET dv/dt ruggedness
* Extremely low losses due to very low FOM Rdson
* Qg and Eoss
* Very high commutation ruggedness
* Easy to use/drive
* Pb-free plating, Halogen free mold compound
* Qualified for industrial grade applications acco
IPP60R230P6 Datasheet (2.56 MB)
IPP60R230P6
2.56 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor IPx60R230P6
Data Sheet
Rev. 2.2 Final
Power Man.
📁 Related Datasheet
IPP60R230P6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R230P6，IIPP60R230P6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.23Ω ·Enhancement mode ·Fast Switch.
IPP60R250CP - Power Transistor
(Infineon Technologies AG)
9??-'@),'4?
4VVS=>AB= # : A 0<& <,9 =4=>: <
7LHZ[XLY V)DL: HI;>
IPP60R250CP - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R250CP，IIPP60R250CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.25Ω ·Enhancement mode ·Fast Switch.
IPP60R280C6 - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C6 600V
600V CoolMOS™ C6 Power Transistor IPx60R280C6
Data Sheet
Rev. 2.3 Final
Powe.
IPP60R280C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R280C6，IIPP60R280C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switch.
IPP60R280CFD7 - MOSFET
(Infineon)
IPP60R280CFD7
MOSFET
600V CoolMOSª CFD7 Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to.
IPP60R280CFD7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Swi.
IPP60R280E6 - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ E6 600V
600V CoolMOS™ E6 Power Transistor IPx60R280E6
Data Sheet
Rev. 2.2 Final
Powe.
