IPP60R600CP Datasheet, Mosfet, INCHANGE

IPP60R600CP Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤0.6Ω
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations f

PDF File Details

Part number:

IPP60R600CP

Manufacturer:

INCHANGE

File Size:

240.09kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Ultra low gate charge

High peak current capability

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V

IPP60R600CP Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPP60R600CP

INCHANGE

📁 Related Datasheet

IPP60R600C6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.6 Final Powe.

IPP60R600C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R600C6，IIPP60R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi.

IPP60R600CP - Power Transistor (Infineon Technologies)
9??-'@-''4? 4VVS=>AB= # : A 0<& < ,9 = 4 = > :< 7LHZ[XLY V )DL: H I; > I/ HG M . X V2 A I G 6A DL <6I : 8 =6G <: V MI G : B : 9.

IPP60R600E6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.2 Final Powe.

IPP60R600E6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R600E6，IIPP60R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi.

IPP60R600P6 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.2 Final Power Man.

IPP60R600P6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R600P6，IIPP60R600P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi.

IPP60R600P7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R600P7，IIPP60R600P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi.

IPP60R600P7 - MOSFET (Infineon)
IPP60R600P7 MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.

IPP60R040C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP60R040C7，IIPP60R040C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.04Ω ·Enhancement mode ·Fast Switch.