IPP60R600E6 - N-Channel MOSFET

INCHANGE

IPP60R600E6 Datasheet Preview — Preview of IPP60R600E6 PDF

Datasheet Details

Part number	IPP60R600E6
Manufacturer	INCHANGE
File Size	240.26 KB
Description	N-Channel MOSFET
Datasheet	IPP60R600E6-INCHANGE.pdf

IPP60R600E6 Product details

Description

Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 19 PD Total Dissipation @TC=25℃ 63 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Ch

Features

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Static drain-source on-resistance: RDS(on) ≤0.6Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 10, 2020 |