IPP60R600E6 Datasheet - INCHANGE

Datasheet Details

Part number:

IPP60R600E6

Manufacturer:

INCHANGE

File Size:

240.26 KB

Description:

N-Channel MOSFET

isc N-Channel MOSFET Transistor IPP60R600E6，IIPP60R600E6 *FEATURES *Static drain-source on-resistance: RDS(on) ≤0.6Ω *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESC

IPP60R600E6-INCHANGE.pdf

IPP60R600E6 Datasheet Preview — Preview of IPP60R600E6 PDF

IPP60R600E6, N-Channel MOSFET

*Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 19

IPP60R600E6 Distributor

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IPP60R600E6 N-Channel MOSFET INCHANGE

INCHANGE IPP60R600E6-like datasheet