IPU80R1K4CE N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

📥 Download Datasheet

IPU80R1K4CE Datasheet Preview — Preview of IPU80R1K4CE PDF

Datasheet Specifications

Part number: IPU80R1K4CE
Manufacturer: INCHANGE
File Size: 260.61 KB
Datasheet: IPU80R1K4CE-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 3.9 A PD Total Dissipation @TC=25℃ 63 W Tj Max. Operating Junction Temperature -55~150

IPU80R1K4CE Distributors

📁 Related Datasheet

IPU80R1K4P7 IPU80R1K0CE IPU80R2K8CE IPU80R4K5P7 IPU04N03LA IPU04N03LAG

📌 All Tags

IPU80R1K4CE N-Channel MOSFET INCHANGE

INCHANGE IPU80R1K4CE-like datasheet