IPW60R099C7
Overview
- Static drain-source on-resistance: RDS(on)≤99mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Suitable for hard and soft switching
| Part | IPW60R099C7 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 238.78 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IPW60R099C7 | Infineon | MOSFET |
| IPW60R099CM8 | Infineon | 600V Power Transistor |
| IPW60R099CP | Infineon | Power Transistor |
| IPW60R099CPA | Infineon | Power Transistor |
| IPW60R099C6 | Infineon | MOSFET |