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IRF2907Z N-Channel MOSFET

IRF2907Z Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF2907Z， IIRF2907Z *.

IRF2907Z Features

* Static drain-source on-resistance: RDS(on) ≤4.5mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF2907Z Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 75 IDM Drain Current-Single Pulsed 680 PD Total Dissipation @TC=25℃ 330 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRF2907Z
Manufacturer
INCHANGE
File Size
241.91 KB
Datasheet
IRF2907Z-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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