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IRF3709 - N-Channel MOSFET

IRF3709 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3709， IIRF3709 *.

IRF3709 Features

* Low drain-source on-resistance: RDS(on) ≤9.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRF3709 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 360 PD Total Dissipation @TC=25℃ 120 Tj Max. Operating Junction Temperature 150 Tstg Storage Te

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Datasheet Details

Part number
IRF3709
Manufacturer
INCHANGE
File Size
241.93 KB
Datasheet
IRF3709-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE IRF3709-like datasheet

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